2N5909 — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N5909: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.225 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.370 INCHES NOMINAL IN, semiconductor_material: SILICON ALL TRANSISTOR, terminal_circle_diameter: 0.200 INCHES NOMINAL IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-554-9402, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N5909

NSN: 5961-00-554-9402
NIINs: 005549402, 011989994
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80131 — ELECTRONIC INDUSTRIES ASSOCIATION

SPECIFICATIONS

overall_length	0.225 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.370 INCHES NOMINAL IN
semiconductor_material	SILICON ALL TRANSISTOR
terminal_circle_diameter	0.200 INCHES NOMINAL IN
terminal_type_and_quantity	7 UNINSULATED WIRE LEAD
component_name_and_quantity	2 TRANSISTOR
power_rating_per_characteristic	500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
current_rating_per_characteristic	10.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
voltage_rating_in_volts_per_characteristic	-400.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -40.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
joint_electronic_device_engineering_council/jedec/case_outline_designation	TO-78
NSN	5961-00-554-9402

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR

•

OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR

•

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

•

TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	40.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
OVERALL DIAMETER	0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
OVERALL LENGTH	0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	2 TRANSISTOR
TERMINAL TYPE AND QUANTITY	6 UNINSULATED WIRE LEAD
TERMINAL CIRCLE DIAMETER	0.200 INCHES NOMINAL IN

SUBSTITUTES & CROSS-REFERENCES 1

RELEASE6057Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N5909?

2N5909 is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace 2N5909?

There is 1 known substitute for 2N5909: RELEASE6057. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N5909?

2N5909 is cataloged in the U.S. Government catalog under NSN 5961-00-554-9402. This indicates validated use in U.S. government and defense supply chains.

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2N5909 — SEMICONDUCTOR DEVICES,UNITIZED

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