2N5831 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N5831: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN, overall_height: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN, overall_length: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-254-1758, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N5831

NSN: 5961-00-254-1758
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 07263 — FAIRCHILD SEMICONDUCTOR CORP (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN
overall_height	0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN
overall_length	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE6077 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	625.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
NSN	5961-00-254-1758

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 CELSIUS JUNCTION DEGC

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	165.0 CELSIUS JUNCTION DEGC
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 2

RELEASE6077Reference document

Same NSN cross-reference

Reference document — Secondary reference

10-10011-0ASame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N5831?

2N5831 is a TRANSISTOR.

What parts can replace 2N5831?

There are 2 known substitutes for 2N5831: RELEASE6077, 10-10011-0A. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N5831?

2N5831 is cataloged in the U.S. Government catalog under NSN 5961-00-254-1758. This indicates validated use in U.S. government and defense supply chains.

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2N5831 — TRANSISTOR

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