2N5823 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N5823: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN, overall_height: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN, overall_length: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, special_features: JUNCTION PATTERN ARRANGEMENT: PNP, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-035-5813, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N5823

NSN: 5961-01-035-5813
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 34156 — OSI OPTOELECTRONICS, INC DBA SEMICOA (USA)

SPECIFICATIONS

overall_width	0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN
overall_height	0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN
overall_length	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
special_features	JUNCTION PATTERN ARRANGEMENT: PNP
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE6045 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
NSN	5961-01-035-5813

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 CELSIUS JUNCTION DEGC

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	135.0 CELSIUS JUNCTION DEGC
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	750.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 1

RELEASE6045Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N5823?

2N5823 is a TRANSISTOR.

What parts can replace 2N5823?

There is 1 known substitute for 2N5823: RELEASE6045. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N5823?

2N5823 is cataloged in the U.S. Government catalog under NSN 5961-01-035-5813. This indicates validated use in U.S. government and defense supply chains.

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2N5823 — TRANSISTOR

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