2N5656 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N5656: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.305 INCHES MAXIMUM IN, overall_height: 0.105 INCHES MAXIMUM IN, overall_length: 0.435 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-361-8751, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N5656

NSN: 5961-00-361-8751
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80131 — ELECTRONIC INDUSTRIES ASSOCIATION

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.305 INCHES MAXIMUM IN
overall_height	0.105 INCHES MAXIMUM IN
overall_length	0.435 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	1
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE6050 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	20.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
NSN	5961-00-361-8751

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 325.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.105 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	325.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	165.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.435 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	0.305 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 2

RELEASE6050Reference document

Same NSN cross-reference

Reference document — Secondary reference

05C05656Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N5656?

2N5656 is a TRANSISTOR.

What parts can replace 2N5656?

There are 2 known substitutes for 2N5656: RELEASE6050, 05C05656. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N5656?

2N5656 is cataloged in the U.S. Government catalog under NSN 5961-00-361-8751. This indicates validated use in U.S. government and defense supply chains.

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2N5656 — TRANSISTOR

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