2N5518 — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N5518: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.230 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-161-3310, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N5518

NSN: 5961-00-161-3310
NIINs: 001613310, 004822134
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 32293 — INTERSIL INC SUB OF GENERAL ELECTRIC CO (USA)

SPECIFICATIONS

overall_length	0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.230 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
semiconductor_material	SILICON ALL TRANSISTOR
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	6 UNINSULATED WIRE LEAD
component_name_and_quantity	2 TRANSISTOR
power_rating_per_characteristic	250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
current_rating_per_characteristic	50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-00-161-3310

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC AND -40.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR

•

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-40.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC AND -40.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
OVERALL LENGTH	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	2 TRANSISTOR
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR

SUBSTITUTES & CROSS-REFERENCES 2

40-001005-01Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

DN877Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N5518?

2N5518 is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace 2N5518?

There are 2 known substitutes for 2N5518: 40-001005-01, DN877. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N5518?

2N5518 is cataloged in the U.S. Government catalog under NSN 5961-00-161-3310. This indicates validated use in U.S. government and defense supply chains.

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2N5518 — SEMICONDUCTOR DEVICES,UNITIZED

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