2N5447 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N5447: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.165 INCHES MAXIMUM IN, overall_height: 0.190 INCHES MAXIMUM IN, overall_length: 0.400 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.400 INCHES MINIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-436-1002, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N5447

NSN: 5961-00-436-1002
NIINs: 004361002, 010143878
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 31338 — SEMITRONICS CORP (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.165 INCHES MAXIMUM IN
overall_height	0.190 INCHES MAXIMUM IN
overall_length	0.400 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.400 INCHES MINIMUM IN
overall_diameter	0.230 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: PNP
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE5747 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
NSN	5961-00-436-1002

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

•

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.190 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.205 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	0.165 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
SPECIFICATION/STANDARD DATA	80131-RELEASE5747 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
SPECIAL FEATURES	JUNCTION PATTERN ARRANGEMENT: PNP

SUBSTITUTES & CROSS-REFERENCES 5

A4334Reference document

Same NSN cross-reference

Reference document — Secondary reference

033530Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

106-0008-000Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

RELEASE5747Reference document

Same NSN cross-reference

Reference document — Secondary reference

2N5447AReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N5447?

2N5447 is a TRANSISTOR.

What parts can replace 2N5447?

There are 5 known substitutes for 2N5447: A4334, 033530, 106-0008-000 and 2 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N5447?

2N5447 is cataloged in the U.S. Government catalog under NSN 5961-00-436-1002. This indicates validated use in U.S. government and defense supply chains.

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2N5447 — TRANSISTOR

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