2N5435 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N5435: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.875 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE, internal_configuration: JUNCTION CONTACT, semiconductor_material: GERMANIUM. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-061-6530, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N5435

NSN: 5961-01-061-6530
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 53399 — GPD OPTOELECTRONICS CORP. DIV GPD OPTOELECTRONICS (USA)

SPECIFICATIONS

overall_length	0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
overall_diameter	0.875 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
internal_configuration	JUNCTION CONTACT
semiconductor_material	GERMANIUM
mounting_facility_quantity	2
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD AND 1 CASE
specification/standard_data	80131-RELEASE5782 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
internal_junction_configuration	PNP
power_rating_per_characteristic	120.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
current_rating_per_characteristic	12.00 AMPERES MAXIMUM BASE CURRENT, DC AND 60.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
NSN	5961-01-061-6530

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3

•

OVERALL DIAMETER: 0.875 INCHES MAXIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

INTERNAL JUNCTION CONFIGURATION: PNP

•

SEMICONDUCTOR MATERIAL: GERMANIUM

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-3
OVERALL DIAMETER	0.875 INCHES MAXIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
INTERNAL JUNCTION CONFIGURATION	PNP
SEMICONDUCTOR MATERIAL	GERMANIUM
OVERALL LENGTH	0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT

SUBSTITUTES & CROSS-REFERENCES 1

RELEASE5782Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N5435?

2N5435 is a TRANSISTOR.

What parts can replace 2N5435?

There is 1 known substitute for 2N5435: RELEASE5782. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N5435?

2N5435 is cataloged in the U.S. Government catalog under NSN 5961-01-061-6530. This indicates validated use in U.S. government and defense supply chains.

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2N5435 — TRANSISTOR

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