2N5129 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N5129: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.240 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-040-1480, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N5129

NSN: 5961-01-040-1480
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80131 — ELECTRONIC INDUSTRIES ASSOCIATION

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_length	0.240 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_circle_diameter	0.105 INCHES MAXIMUM IN
terminal_type_and_quantity	4 PIN
specification/standard_data	80131-RELEASE5545 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
NSN	5961-01-040-1480

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.240 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
CURRENT RATING PER CHARACTERISTIC	500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
SPECIFICATION/STANDARD DATA	80131-RELEASE5545 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION

SUBSTITUTES & CROSS-REFERENCES 1

RELEASE5545Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N5129?

2N5129 is a TRANSISTOR.

What parts can replace 2N5129?

There is 1 known substitute for 2N5129: RELEASE5545. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N5129?

2N5129 is cataloged in the U.S. Government catalog under NSN 5961-01-040-1480. This indicates validated use in U.S. government and defense supply chains.

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2N5129 — TRANSISTOR

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