2N4299: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.297 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.620 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-089-7447, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.297 INCHES NOMINAL IN |
| mounting_method | UNTHREADED HOLE(S) |
| overall_diameter | 0.620 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| specification/standard_data | 80131-RELEASE5322 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION80131-RELEASE5322 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| power_rating_per_characteristic | 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| current_rating_per_characteristic | 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| NSN | 5961-00-089-7447 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| MOUNTING FACILITY QUANTITY | 22 |
| OVERALL DIAMETER | 0.620 INCHES NOMINAL0.620 INCHES NOMINAL IN |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICONSILICON |
| OVERALL LENGTH | 0.340 INCHES NOMINAL0.340 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACTJUNCTION CONTACT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| SPECIFICATION/STANDARD DATA | 80131-RELEASE5322 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION80131-RELEASE5322 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |