2N4286 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N4286: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.090 INCHES NOMINAL IN, overall_height: 0.090 INCHES NOMINAL IN, overall_length: 0.175 INCHES NOMINAL IN, mounting_method: TERMINAL, special_features: JUNCTION PATTERN ARRANGEMENT: PNP, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-403-4142, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N4286

NSN: 5961-00-403-4142
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 12040 — NATIONAL SEMICONDUCTOR CORP (USA)

SPECIFICATIONS

overall_width	0.090 INCHES NOMINAL IN
overall_height	0.090 INCHES NOMINAL IN
overall_length	0.175 INCHES NOMINAL IN
mounting_method	TERMINAL
special_features	JUNCTION PATTERN ARRANGEMENT: PNP
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE5363 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
current_rating_per_characteristic	100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
NSN	5961-00-403-4142

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.090 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.175 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	0.090 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
SPECIFICATION/STANDARD DATA	80131-RELEASE5363 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION

SUBSTITUTES & CROSS-REFERENCES 2

2N4286AReference document

Same NSN cross-reference

Reference document — Secondary reference

RELEASE5363Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N4286?

2N4286 is a TRANSISTOR.

What parts can replace 2N4286?

There are 2 known substitutes for 2N4286: 2N4286A, RELEASE5363. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N4286?

2N4286 is cataloged in the U.S. Government catalog under NSN 5961-00-403-4142. This indicates validated use in U.S. government and defense supply chains.

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2N4286 — TRANSISTOR

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