2N4232 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N4232: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.700 INCHES MAXIMUM IN, overall_height: 0.340 INCHES MAXIMUM IN, overall_length: 1.252 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.500 INCHES MAXIMUM IN, special_features: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-139-2613, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N4232

NSN: 5961-00-139-2613
NIINs: 001392613, 004250633
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

overall_width	0.700 INCHES MAXIMUM IN
overall_height	0.340 INCHES MAXIMUM IN
overall_length	1.252 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
overall_diameter	0.500 INCHES MAXIMUM IN
special_features	WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
precious_material	GOLD
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD AND 1 CASE
NSN	5961-00-139-2613

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

OVERALL DIAMETER: 0.500 INCHES MAXIMUM IN

•

PRECIOUS MATERIAL: GOLD

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY	2
OVERALL DIAMETER	0.500 INCHES MAXIMUM IN
PRECIOUS MATERIAL	GOLD
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 1

1982460-1Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N4232?

2N4232 is a TRANSISTOR.

What parts can replace 2N4232?

There is 1 known substitute for 2N4232: 1982460-1. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N4232?

2N4232 is cataloged in the U.S. Government catalog under NSN 5961-00-139-2613. This indicates validated use in U.S. government and defense supply chains.

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2N4232 — TRANSISTOR

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