2N4147 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N4147: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MAXIMUM IN, overall_diameter: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-148-6102, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N4147

NSN: 5961-00-148-6102
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 31338 — SEMITRONICS CORP (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MAXIMUM IN
overall_diameter	0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: PNPN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	4 UNINSULATED WIRE LEAD
power_rating_per_characteristic	200.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
NSN	5961-00-148-6102

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKOVER VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM BREAKOVER VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	110.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	8.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE

SUBSTITUTES & CROSS-REFERENCES 3

2N4147ASame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

RELEASE 5245Reference document

Same NSN cross-reference

Reference document — Secondary reference

954-90203-001Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N4147?

2N4147 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 2N4147?

There are 3 known substitutes for 2N4147: 2N4147A, RELEASE 5245, 954-90203-001. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N4147?

2N4147 is cataloged in the U.S. Government catalog under NSN 5961-00-148-6102. This indicates validated use in U.S. government and defense supply chains.

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2N4147 — SEMICONDUCTOR DEVICE,THYRISTOR

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