2N4101: SEMICONDUCTOR DEVICE,THYRISTOR.
The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_width: 0.700 INCHES NOMINAL0.700 INCHES NOMINAL IN, overall_height: 0.340 INCHES MAXIMUM0.340 INCHES MAXIMUM IN, overall_length: 0.340 INCHES MAXIMUM IN, mounting_method: BRACKET(S) AND UNTHREADED HOLE(S), terminal_length: 0.360 INCHES MINIMUM0.360 INCHES MINIMUM IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-077-2119, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_width | 0.700 INCHES NOMINAL0.700 INCHES NOMINAL IN |
| overall_height | 0.340 INCHES MAXIMUM0.340 INCHES MAXIMUM IN |
| overall_length | 0.340 INCHES MAXIMUM IN |
| mounting_method | BRACKET(S) AND UNTHREADED HOLE(S) |
| terminal_length | 0.360 INCHES MINIMUM0.360 INCHES MINIMUM IN |
| overall_diameter | 0.620 INCHES MAXIMUM IN |
| features_provided | HERMETICALLY SEALED CASE |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 PIN AND 1 CASE |
| power_rating_per_characteristic | 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| NSN | 5961-00-077-2119 |
| OVERALL HEIGHT | 0.340 INCHES MAXIMUM0.340 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM FORWARD VOLTAGE, PEAK600.0 MAXIMUM FORWARD VOLTAGE, PEAK |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 CELSIUS AMBIENT AIR100.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING FACILITY QUANTITY | 22 |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-66TO-66 |
| TERMINAL LENGTH | 0.360 INCHES MINIMUM0.360 INCHES MINIMUM IN |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICONSILICON |
| OVERALL LENGTH | 1.252 INCHES MAXIMUM1.252 INCHES MAXIMUM IN |
| OVERALL WIDTH | 0.700 INCHES NOMINAL0.700 INCHES NOMINAL IN |