The SEMICONDUCTOR DEVICE SET is a the manufacturer industrial component. Key specifications include overall_length: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN, special_features: WEAPON SYSTEM ESSENTIAL, features_provided: HERMETICALLY SEALED CASE. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-078-6860, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN |
| special_features | WEAPON SYSTEM ESSENTIAL |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| end_item_identification | AIRCRAFT, ( AC-130H, MC-130H, EC-130E, HC-130 ); SUPPORT EQUIPMENT, |
| terminal_circle_diameter | 0.100 INCHES NOMINAL IN |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| component_name_and_quantity | 3 TRANSISTOR |
| NSN | 5961-00-078-6860 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD3 UNINSULATED WIRE LEAD |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM0.210 INCHES MAXIMUM IN |
| SEMICONDUCTOR MATERIAL | SILICONSILICON |
| MOUNTING METHOD | TERMINALTERMINAL |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM0.230 INCHES MAXIMUM IN |
| POWER RATING PER CHARACTERISTIC | 1.8 WATTS MAXIMUM COLLECTOR POWER DISSIPATION1.8 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| INTERNAL CONFIGURATION | FIELD EFFECTFIELD EFFECT |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM0.500 INCHES MINIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT10.00 MILLIAMPERES MAXIMUM GATE CURRENT |