The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN, overall_height: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN, overall_length: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.590 INCHES MAXIMUM IN. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-124-5245, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN |
| overall_height | 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN |
| overall_length | 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| transfer_ratio | 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| mounting_method | TERMINAL |
| terminal_length | 0.590 INCHES MAXIMUM IN |
| overall_diameter | 0.205 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: PNP |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| NSN | 5961-00-124-5245 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| OVERALL WIDTH | 0.205 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| SEMICONDUCTOR MATERIAL | SILICON |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |