2N3797 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N3797: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.188 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.220 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-409-5498, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N3797

NSN: 5961-00-409-5498
NIINs: 004095498, 009887411
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

overall_length	0.188 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.220 INCHES NOMINAL IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE5041 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
current_rating_per_characteristic	20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
NSN	5961-00-409-5498

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

•

OVERALL DIAMETER: 0.195 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	20.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
OVERALL DIAMETER	0.195 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.210 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N3797?

2N3797 is a TRANSISTOR.

What is the NSN for 2N3797?

2N3797 is cataloged in the U.S. Government catalog under NSN 5961-00-409-5498. This indicates validated use in U.S. government and defense supply chains.

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2N3797 — TRANSISTOR

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