2N3570 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N3570: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.198 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES NOMINAL IN, overall_diameter: 0.219 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-421-4728, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N3570

NSN: 5961-00-421-4728
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 01295 — TEXAS INSTRUMENTS INCORPORATED (USA)

SPECIFICATIONS

overall_length	0.198 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES NOMINAL IN
overall_diameter	0.219 INCHES NOMINAL IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_circle_diameter	0.018 INCHES NOMINAL IN
terminal_type_and_quantity	4 UNINSULATED WIRE LEAD
internal_junction_configuration	NPN
power_rating_per_characteristic	200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
current_rating_per_characteristic	50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
NSN	5961-00-421-4728

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.219 INCHES NOMINAL IN

•

TERMINAL LENGTH: 0.500 INCHES NOMINAL IN

•

MOUNTING METHOD: TERMINAL

•

INTERNAL JUNCTION CONFIGURATION: NPN

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.219 INCHES NOMINAL IN
TERMINAL LENGTH	0.500 INCHES NOMINAL IN
MOUNTING METHOD	TERMINAL
INTERNAL JUNCTION CONFIGURATION	NPN
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.198 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

531615-2Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

329328-1Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N3570?

2N3570 is a TRANSISTOR.

What parts can replace 2N3570?

There are 2 known substitutes for 2N3570: 531615-2, 329328-1. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N3570?

2N3570 is cataloged in the U.S. Government catalog under NSN 5961-00-421-4728. This indicates validated use in U.S. government and defense supply chains.

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2N3570 — TRANSISTOR

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