2N3199 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N3199: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.390 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), overall_diameter: 0.375 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNP, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.190 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-020-7942, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N3199

NSN: 5961-00-020-7942
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80131 — ELECTRONIC INDUSTRIES ASSOCIATION

SPECIFICATIONS

overall_length	0.390 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
overall_diameter	0.375 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: PNP
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.190 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.437 INCHES NOMINAL IN
terminal_type_and_quantity	1 THREADED STUD AND 3 TAB, SOLDER LUG
NSN	5961-00-020-7942

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

OVERALL DIAMETER: 0.375 INCHES MAXIMUM IN

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
OVERALL DIAMETER	0.375 INCHES MAXIMUM IN
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.390 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.437 INCHES NOMINAL IN

SUBSTITUTES & CROSS-REFERENCES 2

16600038-001Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

RELEASE4663Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N3199?

2N3199 is a TRANSISTOR.

What parts can replace 2N3199?

There are 2 known substitutes for 2N3199: 16600038-001, RELEASE4663. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N3199?

2N3199 is cataloged in the U.S. Government catalog under NSN 5961-00-020-7942. This indicates validated use in U.S. government and defense supply chains.

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2N3199 — TRANSISTOR

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