2N3018: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.460 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), overall_diameter: 0.610 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, nominal_thread_size: 0.250 INCHES IN, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-823-9956, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.460 INCHES MAXIMUM IN |
| mounting_method | THREADED STUD(S) |
| overall_diameter | 0.610 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| nominal_thread_size | 0.250 INCHES IN |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| overall_width_across_flats | 0.687 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 3 TAB, SOLDER LUG |
| power_rating_per_characteristic | 25.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| NSN | 5961-00-823-9956 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| OVERALL DIAMETER | 0.610 INCHES MAXIMUM IN |
| MOUNTING METHOD | THREADED STUD(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.460 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| OVERALL WIDTH ACROSS FLATS | 0.687 INCHES MAXIMUM IN |
| NOMINAL THREAD SIZE | 0.250 INCHES IN |