The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.230 INCHES MAXIMUM IN, special_features: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-089-0689, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.210 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.230 INCHES MAXIMUM IN |
| special_features | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_circle_diameter | 0.100 INCHES NOMINAL IN |
| terminal_type_and_quantity | 6 UNINSULATED WIRE LEAD |
| component_name_and_quantity | 2 TRANSISTOR |
| power_rating_per_characteristic | 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-00-089-0689 |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL IN |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM IN |
| MOUNTING METHOD | TERMINAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-71 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |