2N2513 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N2513: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.260 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.500 INCHES MINIMUM IN, overall_diameter: 0.370 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-403-7340, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N2513

NSN: 5961-00-403-7340
NIINs: 004037340, 008434507
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 49956 — RAYTHEON COMPANY DIV CORP (USA)

SPECIFICATIONS

overall_length	0.260 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.500 INCHES MINIMUM IN
overall_diameter	0.370 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
semiconductor_material	SILICON
terminal_circle_diameter	0.200 INCHES NOMINAL IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	1.25 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
voltage_rating_in_volts_per_characteristic	100.0 MAXIMUM REVERSE VOLTAGE, PEAK
maximum_operating_temp_per_measurement_point	125.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-00-403-7340

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM FORWARD VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.370 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	200.0 MAXIMUM FORWARD VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.370 INCHES MAXIMUM IN
TERMINAL LENGTH	1.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.260 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
TEST DATA DOCUMENT	49956-322MR223 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 1

322MR223P001Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N2513?

2N2513 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 2N2513?

There is 1 known substitute for 2N2513: 322MR223P001. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N2513?

2N2513 is cataloged in the U.S. Government catalog under NSN 5961-00-403-7340. This indicates validated use in U.S. government and defense supply chains.

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2N2513 — SEMICONDUCTOR DEVICE,THYRISTOR

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