2N1806 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N1806: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 3.327 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), overall_diameter: 1.227 INCHES MAXIMUM IN, special_features: ONE CATHODE LEAD (SMALL WIRE W/LUG) MAY BE CUT OFF IF NOT NEEDED., nominal_thread_size: 0.500 INCHES IN, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-883-0110, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N1806

NSN: 5961-00-883-0110
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 83781 — NATIONAL ELECTRONICS DIV OF RICHARDSON ELECTRONICS LTD (USA)

SPECIFICATIONS

overall_length	3.327 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
overall_diameter	1.227 INCHES MAXIMUM IN
special_features	ONE CATHODE LEAD (SMALL WIRE W/LUG) MAY BE CUT OFF IF NOT NEEDED.
nominal_thread_size	0.500 INCHES IN
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	1.047 INCHES NOMINAL IN
terminal_type_and_quantity	3 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
specification/standard_data	80131-RELEASE4287 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION
NSN	5961-00-883-0110

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 720.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 750.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 10.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE AND 5.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS CASE DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-94

•

OVERALL DIAMETER: 1.227 INCHES MAXIMUM IN

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 720.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 750.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 10.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE AND 5.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY	1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-94
OVERALL DIAMETER	1.227 INCHES MAXIMUM IN
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	3.327 INCHES MAXIMUM IN
OVERALL WIDTH ACROSS FLATS	1.047 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.500 INCHES IN

SUBSTITUTES & CROSS-REFERENCES 1

RELEASE4287Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N1806?

2N1806 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 2N1806?

There is 1 known substitute for 2N1806: RELEASE4287. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N1806?

2N1806 is cataloged in the U.S. Government catalog under NSN 5961-00-883-0110. This indicates validated use in U.S. government and defense supply chains.

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2N1806 — SEMICONDUCTOR DEVICE,THYRISTOR

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