2N1751: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.875 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNP, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-751-1300, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| overall_diameter | 0.875 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: PNP |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | GERMANIUM |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 1 CASE AND 2 PIN |
| current_rating_per_characteristic | 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 25.00 AMPERES MAXIMUM BASE CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS CASE DEGC |
| NSN | 5961-00-751-1300 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS CASE DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM IN |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| OVERALL LENGTH | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 25.00 AMPERES MAXIMUM BASE CURRENT, DC |