2N1197 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N1197: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.260 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.500 INCHES MINIMUM IN, overall_diameter: 0.370 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNP, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-689-8722, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N1197

NSN: 5961-00-689-8722
NIINs: 006898722, 009888557
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 30043 — SOLID STATE DEVICES, INC (USA)

SPECIFICATIONS

overall_length	0.260 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.500 INCHES MINIMUM IN
overall_diameter	0.370 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: PNP
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_circle_diameter	0.200 INCHES NOMINAL IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE3403 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
internal_junction_configuration	PNP
NSN	5961-00-689-8722

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5

•

OVERALL DIAMETER: 0.370 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-70.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-5
OVERALL DIAMETER	0.370 INCHES MAXIMUM IN
TERMINAL LENGTH	1.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.260 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
CURRENT RATING PER CHARACTERISTIC	-100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 1

RELEASE3403Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N1197?

2N1197 is a TRANSISTOR.

What parts can replace 2N1197?

There is 1 known substitute for 2N1197: RELEASE3403. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N1197?

2N1197 is cataloged in the U.S. Government catalog under NSN 5961-00-689-8722. This indicates validated use in U.S. government and defense supply chains.

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2N1197 — TRANSISTOR

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