2N1174: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.360 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.500 INCHES MINIMUM IN, overall_diameter: 0.370 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-079-8635, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.360 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.500 INCHES MINIMUM IN |
| overall_diameter | 0.370 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | GERMANIUM |
| terminal_circle_diameter | 0.100 INCHES NOMINAL IN |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| specification/standard_data | 81349-MIL-S-19500/215 GOVERNMENT SPECIFICATION |
| power_rating_per_characteristic | 25.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| NSN | 5961-00-079-8635 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 CELSIUS JUNCTION100.0 CELSIUS JUNCTION DEGC |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM1.500 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINALTERMINAL |
| SEMICONDUCTOR MATERIAL | GERMANIUMGERMANIUM |
| OVERALL LENGTH | 0.360 INCHES MAXIMUM0.360 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACTJUNCTION CONTACT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |