2N1016D — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N1016D: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.550 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), overall_diameter: 1.280 INCHES NOMINAL IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.312 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-421-9309, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N1016D

NSN: 5961-00-421-9309
NIINs: 004219309, 009186484
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 05277 — WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV (USA)

SPECIFICATIONS

overall_length	0.550 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
overall_diameter	1.280 INCHES NOMINAL IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.312 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
internal_junction_configuration	NPN
NSN	5961-00-421-9309

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

OVERALL DIAMETER: 1.240 INCHES MINIMUM AND 1.280 INCHES MAXIMUM IN

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
OVERALL DIAMETER	1.240 INCHES MINIMUM AND 1.280 INCHES MAXIMUM IN
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.546 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
NOMINAL THREAD SIZE	0.190 INCHES IN

SUBSTITUTES & CROSS-REFERENCES 3

SES226Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

STA8914Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

3184628Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N1016D?

2N1016D is a TRANSISTOR.

What parts can replace 2N1016D?

There are 3 known substitutes for 2N1016D: SES226, STA8914, 3184628. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N1016D?

2N1016D is cataloged in the U.S. Government catalog under NSN 5961-00-421-9309. This indicates validated use in U.S. government and defense supply chains.

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2N1016D — TRANSISTOR

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