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29329-1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

29329-1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.370 INCHES NOMINAL IN, overall_diameter: 0.200 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD, power_rating_per_characteristic: 1200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-036-1224, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
29329-1
NSN: 5961-01-036-1224
NIINs: 010361224, 011632379, 013794802, 015658887
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 00752 — L3HARRIS TECHNOLOGIES, INC. DBA HARRIS CORP DIV ANTENNA PRODUCTS (USA)
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_length0.370 INCHES NOMINAL IN
overall_diameter0.200 INCHES NOMINAL IN
features_providedHERMETICALLY SEALED CASE
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
power_rating_per_characteristic1200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic20.00 AMPERES MAXIMUM PEAK PULSE CURRENT
voltage_rating_in_volts_per_characteristic16.0 MAXIMUM BREAKOVER VOLTAGE, DC
NSN5961-01-036-1224
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 29329-1 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM BREAKOVER VOLTAGE, DC
•
OVERALL DIAMETER: 0.200 INCHES NOMINAL IN
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK PULSE CURRENT
•
MATERIAL: SILICON SEMICONDUCTOR
•
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
•
POWER RATING PER CHARACTERISTIC: 1200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC16.0 MAXIMUM BREAKOVER VOLTAGE, DC
OVERALL DIAMETER0.200 INCHES NOMINAL IN
OVERALL LENGTH0.370 INCHES NOMINAL IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC20.00 AMPERES MAXIMUM PEAK PULSE CURRENT
MATERIALSILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC1200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 29329-1?
29329-1 is a SEMICONDUCTOR DEVICE,DIODE.
What is the NSN for 29329-1?
29329-1 is cataloged in the U.S. Government catalog under NSN 5961-01-036-1224. This indicates validated use in U.S. government and defense supply chains.
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