2907750-1 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2907750-1: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 2.612 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: BURN IN, nominal_thread_size: 0.500 INCHES IN, semiconductor_material: SILICON, thread_series_designator: UNF. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-281-2933, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2907750-1

NSN: 5961-01-281-2933
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 10001 — NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER (USA)

SPECIFICATIONS

overall_length	2.612 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
features_provided	BURN IN
nominal_thread_size	0.500 INCHES IN
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	1.056 INCHES NOMINAL IN
terminal_type_and_quantity	1 THREADED STUD AND 1 TAB, SOLDER LUG AND 1 INSULATED WIRE LEAD
power_rating_per_characteristic	2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
current_rating_per_characteristic	110.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 1500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
maximum_operating_temp_per_measurement_point	125.0 CELSIUS JUNCTION DEGC
NSN	5961-01-281-2933

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

FEATURES PROVIDED: BURN IN

•

OVERALL WIDTH ACROSS FLATS: 1.056 INCHES NOMINAL IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	2.612 INCHES MAXIMUM IN
FEATURES PROVIDED	BURN IN
OVERALL WIDTH ACROSS FLATS	1.056 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.500 INCHES IN
CURRENT RATING PER CHARACTERISTIC	110.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 1500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT

SUBSTITUTES & CROSS-REFERENCES 1

C152PReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2907750-1?

2907750-1 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 2907750-1?

There is 1 known substitute for 2907750-1: C152P. Substitute compatibility should be verified for your specific system.

What is the NSN for 2907750-1?

2907750-1 is cataloged in the U.S. Government catalog under NSN 5961-01-281-2933. This indicates validated use in U.S. government and defense supply chains.

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2907750-1 — SEMICONDUCTOR DEVICE,THYRISTOR

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