The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: PLASTIC OR CERAMIC ENCLOSURE, overall_length: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN, mounting_method: TERMINAL, special_features: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: BURN IN, semiconductor_material: SILICON ALL TRANSISTOR. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-294-4715, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC OR CERAMIC ENCLOSURE |
| overall_length | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| special_features | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | BURN IN |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_type_and_quantity | 14 PIN |
| component_name_and_quantity | 5 TRANSISTOR |
| power_rating_per_characteristic | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS ALL TRANSISTOR |
| maximum_operating_temp_per_measurement_point | 175.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-294-4715 |
| SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
| MATERIAL | PLASTIC OR CERAMIC ENCLOSURE |
| FEATURES PROVIDED | BURN IN |
| OVERALL LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 5 TRANSISTOR |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |