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2698642-4 — MICROCIRCUIT,MEMORY

✓ Government record, cited
— · COMPONENT
PRODUCT OVERVIEW

2698642-4: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: PROGRAMMED, inclosure_material: CERAMIC, memory_device_type: PAL, operating_temp_range: -55.0 TO 125.0 CELSIUS DEGC, end_item_identification: HARM 161 B T., inclosure_configuration: DUAL-IN-LINE. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-420-9770, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
2698642-4
NSN: 5962-01-420-9770
NIINs: 014209770, 014210418, 014236857, 014236863
FSC: 5962 — Microcircuits, Electronic
CAGE: 96214 — RAYTHEON COMPANY DBA RAYTHEON (USA)
SPECIFICATIONS
features_providedPROGRAMMED
inclosure_materialCERAMIC
memory_device_typePAL
operating_temp_range-55.0 TO 125.0 CELSIUS DEGC
end_item_identificationHARM 161 B T.
inclosure_configurationDUAL-IN-LINE
terminal_surface_treatmentSOLDER
time_rating_per_chacteristic20.00 NANOSECONDS MAXIMUM ACCESS NS
part_name_assigned_by_controlling_agencyPROGRAMMED C22V10
voltage_rating_and_type_per_characteristic5.0 VOLTS NOMINAL POWER SOURCE
NSN5962-01-420-9770
COMPONENT DIAGRAM
COMPONENT MAIN IC EDGE CONNECTOR No detailed specs available MICROCIRCUIT,MEMORY TITLE COMPONENT PN 2698642-4 MFR MICROCIRCUIT,MEMORY
KEY FEATURES
•
INCLOSURE MATERIAL: CERAMIC
•
TERMINAL SURFACE TREATMENT: SOLDER
•
INCLOSURE CONFIGURATION: DUAL-IN-LINE
•
MEMORY DEVICE TYPE: PAL
•
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
•
OPERATING TEMP RANGE: -55.0 TO 125.0 CELSIUS DEGC
•
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TYPICAL APPLICATIONS
  • Server memory expansion for virtualization workloads
  • Database performance optimization (in-memory computing)
  • VDI and remote desktop session hosting
  • High-performance computing (HPC) clusters
  • Mail server and collaboration platform scaling
  • Application server tier expansion
TECHNICAL CHARACTERISTICS
INCLOSURE MATERIALCERAMIC
TERMINAL SURFACE TREATMENTSOLDER
INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY DEVICE TYPEPAL
VOLTAGE RATING AND TYPE PER CHARACTERISTIC5.0 VOLTS NOMINAL POWER SOURCE
OPERATING TEMP RANGE-55.0 TO 125.0 CELSIUS DEGC
PART NAME ASSIGNED BY CONTROLLING AGENCYPROGRAMMED C22V10
TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC20.00 NANOSECONDS MAXIMUM ACCESS NS
SUBSTITUTES & CROSS-REFERENCES 3
ROM/PROMReference document
Same NSN cross-reference
Reference document — Secondary reference
5962-8753904LAReference document
Same NSN cross-reference
Reference document — Secondary reference
1712127-4Same NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — mutilation + specific procedure
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FREQUENTLY ASKED QUESTIONS
What is 2698642-4?
2698642-4 is a MICROCIRCUIT,MEMORY.
What parts can replace 2698642-4?
There are 3 known substitutes for 2698642-4: ROM/PROM, 5962-8753904LA, 1712127-4. Substitute compatibility should be verified for your specific system.
What is the NSN for 2698642-4?
2698642-4 is cataloged in the U.S. Government catalog under NSN 5962-01-420-9770. This indicates validated use in U.S. government and defense supply chains.
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