2614071-1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2614071-1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.142 INCHES MAXIMUM IN, mounting_method: PRESS FIT, overall_diameter: 0.063 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-314-3170, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2614071-1

NSN: 5961-01-314-3170
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 06424 — ALLIANT TECHSYSTEMS OPERATIONS LLC DIV DEFENSE ELECTRONIC SYSTEMS (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.142 INCHES MAXIMUM IN
mounting_method	PRESS FIT
overall_diameter	0.063 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
capacitance_rating_in_picofarads	4.0 NOMINAL
current_rating_per_characteristic	10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 5000.00 NANOAMPERES NOMINAL REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic	1.0 MAXIMUM FORWARD VOLTAGE, DC AND 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
maximum_operating_temp_per_measurement_point	100.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-01-314-3170

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, DC AND 100.0 MINIMUM BREAKDOWN VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.063 INCHES MAXIMUM IN

•

MOUNTING METHOD: PRESS FIT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CAPACITANCE RATING IN PICOFARADS: 4.0 NOMINAL

•

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 5000.00 NANOAMPERES NOMINAL REVERSE CURRENT, DC

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1.0 MAXIMUM FORWARD VOLTAGE, DC AND 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.063 INCHES MAXIMUM IN
MOUNTING METHOD	PRESS FIT
OVERALL LENGTH	0.142 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CAPACITANCE RATING IN PICOFARADS	4.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC	10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 5000.00 NANOAMPERES NOMINAL REVERSE CURRENT, DC
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 1

RLS4148Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2614071-1?

2614071-1 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 2614071-1?

There is 1 known substitute for 2614071-1: RLS4148. Substitute compatibility should be verified for your specific system.

What is the NSN for 2614071-1?

2614071-1 is cataloged in the U.S. Government catalog under NSN 5961-01-314-3170. This indicates validated use in U.S. government and defense supply chains.

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2614071-1 — SEMICONDUCTOR DEVICE,DIODE

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