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260149-3 — MICROCIRCUIT,MEMORY

✓ Government record, cited
— · COMPONENT
PRODUCT OVERVIEW

260149-3: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include memory_capacity: 256K, features_provided: PROGRAMMABLE AND PROGRAMMED AND ELECTROSTATIC SENSITIVE, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: PLASTIC, memory_device_type: EEPROM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-539-7973, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
260149-3
NSN: 5962-01-539-7973
FSC: 5962 — Microcircuits, Electronic
CAGE: 10138 — ASTRONAUTICS CORPORATION OF AMERICA (USA)
SPECIFICATIONS
memory_capacity256K
features_providedPROGRAMMABLE AND PROGRAMMED AND ELECTROSTATIC SENSITIVE
output_logic_formCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
inclosure_materialPLASTIC
memory_device_typeEEPROM
storage_temp_range-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range-40.0 TO 85.0 CELSIUS DEGC
inclosure_configurationDUAL-IN-LINE
terminal_type_and_quantity8 GULLWING
NSN5962-01-539-7973
COMPONENT DIAGRAM
COMPONENT MAIN IC EDGE CONNECTOR No detailed specs available MICROCIRCUIT,MEMORY TITLE COMPONENT PN 260149-3 MFR MICROCIRCUIT,MEMORY
KEY FEATURES
•
INCLOSURE MATERIAL: PLASTIC
•
FEATURES PROVIDED: PROGRAMMABLE AND PROGRAMMED AND ELECTROSTATIC SENSITIVE
•
INCLOSURE CONFIGURATION: DUAL-IN-LINE
•
MEMORY DEVICE TYPE: EEPROM
•
STORAGE TEMP RANGE: -65.0 TO 150.0 CELSIUS DEGC
•
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
•
OPERATING TEMP RANGE: -40.0 TO 85.0 CELSIUS DEGC
•
TERMINAL TYPE AND QUANTITY: 8 GULLWING
TYPICAL APPLICATIONS
  • Server memory expansion for virtualization workloads
  • Database performance optimization (in-memory computing)
  • VDI and remote desktop session hosting
  • High-performance computing (HPC) clusters
  • Mail server and collaboration platform scaling
  • Application server tier expansion
TECHNICAL CHARACTERISTICS
INCLOSURE MATERIALPLASTIC
FEATURES PROVIDEDPROGRAMMABLE AND PROGRAMMED AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY DEVICE TYPEEEPROM
STORAGE TEMP RANGE-65.0 TO 150.0 CELSIUS DEGC
OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
OPERATING TEMP RANGE-40.0 TO 85.0 CELSIUS DEGC
TERMINAL TYPE AND QUANTITY8 GULLWING
MEMORY CAPACITY256K
SUBSTITUTES & CROSS-REFERENCES 1
AT17LV256Reference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — mutilation + specific procedure
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FREQUENTLY ASKED QUESTIONS
What is 260149-3?
260149-3 is a MICROCIRCUIT,MEMORY.
What parts can replace 260149-3?
There is 1 known substitute for 260149-3: AT17LV256. Substitute compatibility should be verified for your specific system.
What is the NSN for 260149-3?
260149-3 is cataloged in the U.S. Government catalog under NSN 5962-01-539-7973. This indicates validated use in U.S. government and defense supply chains.
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