2540943 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2540943: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 1.530 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: BURN IN AND HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN, semiconductor_material: SILICON, thread_series_designator: UNF. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-302-3349, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2540943

NSN: 5961-01-302-3349
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 10001 — NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER (USA)

SPECIFICATIONS

overall_length	1.530 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
features_provided	BURN IN AND HERMETICALLY SEALED CASE
nominal_thread_size	0.250 INCHES IN
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.553 INCHES NOMINAL IN
terminal_type_and_quantity	2 TAB, SOLDER LUG AND 1 THREADED STUD
power_rating_per_characteristic	5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
current_rating_per_characteristic	16.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 125.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
NSN	5961-01-302-3349

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE

•

OVERALL WIDTH ACROSS FLATS: 0.553 INCHES NOMINAL IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.530 INCHES MAXIMUM IN
FEATURES PROVIDED	BURN IN AND HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.553 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.250 INCHES IN
CURRENT RATING PER CHARACTERISTIC	16.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 125.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT

SUBSTITUTES & CROSS-REFERENCES 1

2N1844AReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2540943?

2540943 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 2540943?

There is 1 known substitute for 2540943: 2N1844A. Substitute compatibility should be verified for your specific system.

What is the NSN for 2540943?

2540943 is cataloged in the U.S. Government catalog under NSN 5961-01-302-3349. This indicates validated use in U.S. government and defense supply chains.

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2540943 — SEMICONDUCTOR DEVICE,THYRISTOR

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