2527433 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2527433: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.380 INCHES MAXIMUM IN, mounting_method: PRESS FIT, overall_diameter: 0.595 INCHES NOMINAL IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPNP, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-044-3079, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2527433

NSN: 5961-00-044-3079
NIINs: 000443079, 012327143
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 10001 — NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER (USA)

SPECIFICATIONS

overall_length	0.380 INCHES MAXIMUM IN
mounting_method	PRESS FIT
overall_diameter	0.595 INCHES NOMINAL IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPNP
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_type_and_quantity	1 PIN AND 2 TAB, SOLDER LUG
power_rating_per_characteristic	5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
current_rating_per_characteristic	80.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS
maximum_operating_temp_per_measurement_point	100.0 CELSIUS JUNCTION DEGC
NSN	5961-00-044-3079

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.595 INCHES NOMINAL IN

•

MOUNTING METHOD: PRESS FIT

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.595 INCHES NOMINAL IN
MOUNTING METHOD	PRESS FIT
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.380 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	80.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
SPECIAL FEATURES	JUNCTION PATTERN ARRANGEMENT: NPNP

SUBSTITUTES & CROSS-REFERENCES 2

SC46DX113Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

NAV0RDDWG2527433Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2527433?

2527433 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 2527433?

There are 2 known substitutes for 2527433: SC46DX113, NAV0RDDWG2527433. Substitute compatibility should be verified for your specific system.

What is the NSN for 2527433?

2527433 is cataloged in the U.S. Government catalog under NSN 5961-00-044-3079. This indicates validated use in U.S. government and defense supply chains.

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2527433 — SEMICONDUCTOR DEVICE,THYRISTOR

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