208672REVB — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

208672REVB: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.265 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, features_provided: HERMETICALLY SEALED CASE, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-681-8030, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

208672REVB

NSN: 5961-00-681-8030
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 83612 — KIDDE INC WALTER KIDDE DIV (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.265 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	500.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic	58.0 MAXIMUM REVERSE VOLTAGE, PEAK
NSN	5961-00-681-8030

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 500.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC

•

MATERIAL: GLASS ENCLOSURE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	58.0 MAXIMUM REVERSE VOLTAGE, PEAK
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.265 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	500.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
MATERIAL	GLASS ENCLOSURE
MATERIAL	GERMANIUM SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC	80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION

SUBSTITUTES & CROSS-REFERENCES 2

208672Reference document

Same NSN cross-reference

Reference document — Secondary reference

T20GReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 208672REVB?

208672REVB is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 208672REVB?

There are 2 known substitutes for 208672REVB: 208672, T20G. Substitute compatibility should be verified for your specific system.

What is the NSN for 208672REVB?

208672REVB is cataloged in the U.S. Government catalog under NSN 5961-00-681-8030. This indicates validated use in U.S. government and defense supply chains.

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208672REVB — SEMICONDUCTOR DEVICE,DIODE

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