206056-001: IMAGE INTENSIFIER,NIGHT VISION.
The IMAGE INTENSIFIER,NIGHT VISION is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.179 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.102 INCHES MINIMUM IN, overall_diameter: 0.149 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-294-1289, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.179 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.102 INCHES MINIMUM IN |
| overall_diameter | 0.149 INCHES MAXIMUM IN |
| features_provided | HERMETICALLY SEALED CASE |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| function_for_which_designed | GENERAL PURPOSE |
| current_rating_per_characteristic | 10.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| voltage_rating_in_volts_per_characteristic | 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1.6 MAXIMUM FORWARD VOLTAGE, DC |
| maximum_operating_temp_per_measurement_point | 165.0 CELSIUS JUNCTION DEGC |
| electrode_internally-electrically_connected_to_case | COLLECTOR |
| NSN | 5961-01-294-1289 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1.6 MAXIMUM FORWARD VOLTAGE, DC |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 CELSIUS JUNCTION DEGC |
| OVERALL DIAMETER | 0.149 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 1.102 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| OVERALL LENGTH | 0.179 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| FUNCTION FOR WHICH DESIGNED | GENERAL PURPOSE |
| MATERIAL | SILICON SEMICONDUCTOR |