2009658-001: MICROCIRCUIT,MEMORY.
The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include special_features: 2,048 X 9-BIT, features_provided: HIGH SPEED AND LOW POWER, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: PLASTIC, memory_device_type: FIRST-IN FIRST-OUT, storage_temp_range: -55.0 TO 125.0 CELSIUS DEGC. This part is cataloged in the U.S.
Government catalog under NSN 5998-01-229-5202, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| special_features | 2,048 X 9-BIT |
| features_provided | HIGH SPEED AND LOW POWER |
| output_logic_form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| inclosure_material | PLASTIC |
| memory_device_type | FIRST-IN FIRST-OUT |
| storage_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| operating_temp_range | +0.0 TO 70.0 CELSIUS DEGC |
| end_item_identification | RADAR THREAT EMITTER AN/MST-T1; M3P REU-L |
| inclosure_configuration | DUAL-IN-LINE |
| time_rating_per_chacteristic | 35.00 NANOSECONDS NOMINAL ACCESS NS |
| part_name_assigned_by_controlling_agency | CMOS SERIAL-TO-PARALLEL FIFO |
| voltage_rating_and_type_per_characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| NSN | 5998-01-229-5202 |
No substitute or cross-reference records for this part.