200-1009-01 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

200-1009-01: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.314 INCHES MAXIMUM IN, overall_height: 0.106 INCHES MAXIMUM IN, overall_length: 0.106 INCHES MAXIMUM IN, mounting_method: PRESS FIT, special_features: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-039-6425, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

200-1009-01

NSN: 5961-01-039-6425
NIINs: 010396425, 013983579
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: F7076 — SCHLUMBERGER INDUSTRIES SA (EQUIPEMENTS DE TEST AUTOMATIQUES) (FRA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_width	0.314 INCHES MAXIMUM IN
overall_height	0.106 INCHES MAXIMUM IN
overall_length	0.106 INCHES MAXIMUM IN
mounting_method	PRESS FIT
special_features	WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_type_and_quantity	3 TAB, SOLDER LUG
criticality_code_justification	FEAT
power_rating_per_characteristic	180.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
current_rating_per_characteristic	25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
NSN	5961-01-039-6425

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 CELSIUS JUNCTION DEGC

•

MOUNTING METHOD: PRESS FIT

•

CRITICALITY CODE JUSTIFICATION: FEAT

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.106 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	20.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	165.0 CELSIUS JUNCTION DEGC
MOUNTING METHOD	PRESS FIT
CRITICALITY CODE JUSTIFICATION	FEAT
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.106 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	0.314 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 7

BFR90Reference document

Same NSN cross-reference

Reference document — Secondary reference

1854-0591Reference document

Same NSN cross-reference

Reference document — Secondary reference

DA-00-027Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

28452-167USame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

9410013Reference document

Same NSN cross-reference

Reference document — Secondary reference

P/N 5-0143Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 200-1009-01?

200-1009-01 is a TRANSISTOR.

What parts can replace 200-1009-01?

There are 7 known substitutes for 200-1009-01: BFR90, 1854-0591, DA-00-027 and 4 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 200-1009-01?

200-1009-01 is cataloged in the U.S. Government catalog under NSN 5961-01-039-6425. This indicates validated use in U.S. government and defense supply chains.

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