1RFF210: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.180 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.560 INCHES MAXIMUM IN, overall_diameter: 0.036 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-267-7897, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.180 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.560 INCHES MAXIMUM IN |
| overall_diameter | 0.036 INCHES NOMINAL IN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 15.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 2.20 AMPERES MAXIMUM DRAIN CURRENT |
| voltage_rating_in_volts_per_characteristic | 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| joint_electronic_device_engineering_council/jedec/case_outline_designation | TO-39 |
| NSN | 5961-01-267-7897 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| OVERALL DIAMETER | 0.036 INCHES NOMINAL IN |
| TERMINAL LENGTH | 0.560 INCHES MAXIMUM IN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.180 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 2.20 AMPERES MAXIMUM DRAIN CURRENT |