PartsTable
Technical Data Sheet
Download PDF

1N916B.TA — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

1N916B.TA: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.160 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.075 INCHES NOMINAL IN, features_provided: ELECTROSTATIC SENSITIVE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-359-2019, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
1N916B.TA
NSN: 5961-01-359-2019
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 27014 — NATIONAL SEMICONDUCTOR CORPORATION (USA)
SPECIFICATIONS
materialGLASS ENCLOSURE
overall_length0.160 INCHES NOMINAL IN
mounting_methodTERMINAL
terminal_length0.500 INCHES MINIMUM IN
overall_diameter0.075 INCHES NOMINAL IN
features_providedELECTROSTATIC SENSITIVE
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
current_rating_per_characteristic150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
voltage_rating_in_volts_per_characteristic50.0 MAXIMUM REVERSE VOLTAGE, PEAK
NSN5961-01-359-2019
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 1N916B.TA MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
•
OVERALL DIAMETER: 0.075 INCHES NOMINAL IN
•
TERMINAL LENGTH: 0.500 INCHES MINIMUM IN
•
MOUNTING METHOD: TERMINAL
•
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
•
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
•
MATERIAL: SILICON SEMICONDUCTOR
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM REVERSE VOLTAGE, PEAK
OVERALL DIAMETER0.075 INCHES NOMINAL IN
TERMINAL LENGTH0.500 INCHES MINIMUM IN
MOUNTING METHODTERMINAL
OVERALL LENGTH0.160 INCHES NOMINAL IN
FEATURES PROVIDEDELECTROSTATIC SENSITIVE
CURRENT RATING PER CHARACTERISTIC150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
MATERIALSILICON SEMICONDUCTOR
MATERIALGLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required
Ready to buy 1N916B.TA?
Compare prices from verified sellers on eBay
Buy on eBay →
As an eBay Partner, PartsTable may earn a commission. Your price is not affected.
FREQUENTLY ASKED QUESTIONS
What is 1N916B.TA?
1N916B.TA is a SEMICONDUCTOR DEVICE,DIODE.
What is the NSN for 1N916B.TA?
1N916B.TA is cataloged in the U.S. Government catalog under NSN 5961-01-359-2019. This indicates validated use in U.S. government and defense supply chains.
Community Feedback
Leave a Comment
Comments are reviewed before appearing. You will receive an email to verify before your comment appears.

Request a Quote — 1N916B.TA