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1N831 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

1N831: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN, overall_diameter: 0.075 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-042-3672, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
1N831
NSN: 5961-00-042-3672
NIINs: 000423672, 009989323
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 96341 — COBHAM ADVANCED ELECTRONIC SOLUTIONS INC. (USA)
SPECIFICATIONS
materialGLASS ENCLOSURE
overall_length0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN
mounting_methodTERMINAL
terminal_length1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN
overall_diameter0.075 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN
features_providedHERMETICALLY SEALED CASE
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
specification/standard_data81349-MIL-S-19500/352 GOVERNMENT SPECIFICATION
power_rating_per_characteristic5.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
voltage_rating_in_volts_per_characteristic125.0 MAXIMUM REVERSE VOLTAGE, PEAK
maximum_operating_temp_per_measurement_point100.0 CELSIUS AMBIENT AIR DEGC
NSN5961-00-042-3672
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 1N831 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
MATERIAL: SILICON SEMICONDUCTOR
•
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TECHNICAL CHARACTERISTICS
FEATURES PROVIDEDHERMETICALLY SEALED CASE
MATERIALSILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
SUBSTITUTES & CROSS-REFERENCES 3
788C164H02Same NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
490498Same NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
1N831AReference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 1N831?
1N831 is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace 1N831?
There are 3 known substitutes for 1N831: 788C164H02, 490498, 1N831A. Substitute compatibility should be verified for your specific system.
What is the NSN for 1N831?
1N831 is cataloged in the U.S. Government catalog under NSN 5961-00-042-3672. This indicates validated use in U.S. government and defense supply chains.
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