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1N759 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

1N759: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN, overall_diameter: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-023-3084, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
1N759
NSN: 5961-00-023-3084
NIINs: 000233084, 004568169, 008469157
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 03877 — GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP (USA)
SPECIFICATIONS
materialGLASS ENCLOSURE
overall_length0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN
mounting_methodTERMINAL
terminal_length1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN
overall_diameter0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN
features_providedHERMETICALLY SEALED CASE
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
function_for_which_designedZENER DIODE
nondefinitive_spec/std_data1N759 TYPE
specification/standard_data81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
voltage_tolerance_in_percent-10.0 TO 10.0
power_rating_per_characteristic400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
NSN5961-00-023-3084
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 1N759 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
NONDEFINITIVE SPEC/STD DATA: 1N759 TYPE
•
MATERIAL: SILICON SEMICONDUCTOR
•
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TECHNICAL CHARACTERISTICS
FEATURES PROVIDEDHERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA1N759 TYPE
MATERIALSILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
SUBSTITUTES & CROSS-REFERENCES 3
1N759AReference document
Same NSN cross-reference
Reference document — Secondary reference
257266Reference document
Same NSN cross-reference
Reference document — Secondary reference
4011Reference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 1N759?
1N759 is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace 1N759?
There are 3 known substitutes for 1N759: 1N759A, 257266, 4011. Substitute compatibility should be verified for your specific system.
What is the NSN for 1N759?
1N759 is cataloged in the U.S. Government catalog under NSN 5961-00-023-3084. This indicates validated use in U.S. government and defense supply chains.
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