1N645A — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N645A: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.150 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-085-6953, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N645A

NSN: 5961-00-085-6953
NIINs: 000856953, 000876047, 004009854, 009589213, 009674947, 009833285, 013525272
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: C7191 — ADELCO ELEKTRONIK GMBH (DEU)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.300 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
overall_diameter	0.150 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
end_item_identification	UK/FSC/602-PHASE III SERVO INTRODUCTION,TEXAS INSTRUMENTS INC
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE2651 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
current_rating_per_characteristic	3.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	225.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
NSN	5961-00-085-6953

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.150 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	225.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.150 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.300 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	0.40 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 2

10564656-9Reference document

Same NSN cross-reference

Reference document — Secondary reference

1N645Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N645A?

1N645A is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N645A?

There are 2 known substitutes for 1N645A: 10564656-9, 1N645. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N645A?

1N645A is cataloged in the U.S. Government catalog under NSN 5961-00-085-6953. This indicates validated use in U.S. government and defense supply chains.

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1N645A — SEMICONDUCTOR DEVICE,DIODE

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