1N5830 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N5830: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 1.138 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.190 INCHES IN, thread_series_designator: UNF. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-503-5379, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N5830

NSN: 5961-00-503-5379
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	1.138 INCHES NOMINAL IN
mounting_method	THREADED STUD(S)
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.190 INCHES IN
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.430 INCHES NOMINAL IN
terminal_type_and_quantity	1 THREADED STUD AND 1 TAB, SOLDER LUG
function_for_which_designed	RECTIFIER
specification/standard_data	80131-RELEASE 6425 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
current_rating_per_characteristic	25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
NSN	5961-00-503-5379

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-203AA

•

MOUNTING METHOD: THREADED STUD(S)

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY	1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	DO-203AA
MOUNTING METHOD	THREADED STUD(S)
OVERALL LENGTH	1.138 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.430 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.190 INCHES IN
CURRENT RATING PER CHARACTERISTIC	25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE

SUBSTITUTES & CROSS-REFERENCES 2

615191-1Reference document

Same NSN cross-reference

Reference document — Secondary reference

RELEASE 6425Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N5830?

1N5830 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N5830?

There are 2 known substitutes for 1N5830: 615191-1, RELEASE 6425. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N5830?

1N5830 is cataloged in the U.S. Government catalog under NSN 5961-00-503-5379. This indicates validated use in U.S. government and defense supply chains.

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1N5830 — SEMICONDUCTOR DEVICE,DIODE

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