1N5230 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N5230: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN, overall_diameter: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-490-1131, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N5230

NSN: 5961-00-490-1131
NIINs: 004901131, 011050607, 011099985, 016174553
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 5V1P1 — ON SEMICONDUCTOR CORPORATION (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN
overall_diameter	0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_circle_diameter	0.020 INCHES NOMINAL IN
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
specification/standard_data	81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
voltage_tolerance_in_percent	-5.0 TO 5.0
power_rating_per_characteristic	500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	85.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
NSN	5961-00-490-1131

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 MAXIMUM NOMINAL REGULATOR VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.107 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	4.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.107 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.300 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 1

EIA5566Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N5230?

1N5230 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N5230?

There is 1 known substitute for 1N5230: EIA5566. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N5230?

1N5230 is cataloged in the U.S. Government catalog under NSN 5961-00-490-1131. This indicates validated use in U.S. government and defense supply chains.

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1N5230 — SEMICONDUCTOR DEVICE,DIODE

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