1N4749 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N4749: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.205 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.100 INCHES MINIMUM IN, overall_diameter: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-097-7668, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N4749

NSN: 5961-00-097-7668
NIINs: 000977668, 012577037
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: D6528 — LACON ELECTRONIC GMBH (DEU)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.205 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.100 INCHES MINIMUM IN
overall_diameter	0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
power_rating_per_characteristic	1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 38.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
voltage_rating_in_volts_per_characteristic	24.0 NOMINAL REGULATOR VOLTAGE, DC AND 1.2 MAXIMUM FORWARD VOLTAGE, DC
maximum_operating_temp_per_measurement_point	200.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-00-097-7668

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.100 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	24.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN
TERMINAL LENGTH	1.100 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.205 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	11.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 2

1N4749AReference document

Same NSN cross-reference

Reference document — Secondary reference

499-048-023Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N4749?

1N4749 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N4749?

There are 2 known substitutes for 1N4749: 1N4749A, 499-048-023. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N4749?

1N4749 is cataloged in the U.S. Government catalog under NSN 5961-00-097-7668. This indicates validated use in U.S. government and defense supply chains.

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1N4749 — SEMICONDUCTOR DEVICE,DIODE

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