1N4747 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N4747: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 2.365 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 1.102 INCHES MINIMUM IN, overall_diameter: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN, terminal_circle_diameter: 0.034 INCHES MAXIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-485-4562, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N4747

NSN: 5961-00-485-4562
NIINs: 004854562, 015769507
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 0PN68 — AMPEX DATA SYSTEMS CORPORATION DBA AMPEX INTELLIGENT SYSTEMS (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	2.365 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	1.102 INCHES MINIMUM IN
overall_diameter	0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN
terminal_circle_diameter	0.034 INCHES MAXIMUM IN
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	250.00 MILLIAMPERES NOMINAL PEAK ON-STATE SURGE CURRENT
part_name_assigned_by_controlling_agency	SILICON PLANAR POWER ZENER DIODE
voltage_rating_in_volts_per_characteristic	20.0 NOMINAL REGULATOR VOLTAGE AND 1.2 MAXIMUM FORWARD VOLTAGE, AVERAGE
maximum_operating_temp_per_measurement_point	200.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-00-485-4562

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.100 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

CURRENT RATING PER CHARACTERISTIC: 13.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN
TERMINAL LENGTH	1.100 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	13.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	PLASTIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N4747?

1N4747 is a SEMICONDUCTOR DEVICE,DIODE.

What is the NSN for 1N4747?

1N4747 is cataloged in the U.S. Government catalog under NSN 5961-00-485-4562. This indicates validated use in U.S. government and defense supply chains.

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1N4747 — SEMICONDUCTOR DEVICE,DIODE

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