1N4737 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N4737: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM IN, overall_diameter: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-110-7858, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N4737

NSN: 5961-00-110-7858
NIINs: 001107858, 010777276
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: C7191 — ADELCO ELEKTRONIK GMBH (DEU)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM IN
overall_diameter	0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
specification/standard_data	81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
voltage_tolerance_in_percent	-5.0 TO 5.0
power_rating_per_characteristic	1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	34.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 191.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
voltage_rating_in_volts_per_characteristic	7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
NSN	5961-00-110-7858

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.100 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 34.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	7.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN
TERMINAL LENGTH	1.100 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.250 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	34.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 2

19-027-4Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

1N4737AReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N4737?

1N4737 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N4737?

There are 2 known substitutes for 1N4737: 19-027-4, 1N4737A. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N4737?

1N4737 is cataloged in the U.S. Government catalog under NSN 5961-00-110-7858. This indicates validated use in U.S. government and defense supply chains.

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1N4737 — SEMICONDUCTOR DEVICE,DIODE

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