1N4616 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N4616: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN, overall_diameter: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-019-8769, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N4616

NSN: 5961-01-019-8769
NIINs: 010198769, 010618788, 013220974
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 01281 — TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN
overall_diameter	0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
end_item_identification	3805-01-260-5163
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	2.70 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
general_characteristics_item_description	WITH MTG HOLES; 197.500 IN. O/A H IN
voltage_rating_in_volts_per_characteristic	2.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
NSN	5961-01-019-8769

COMPONENT DIAGRAM

KEY FEATURES

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS AMBIENT AIR DEGC

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

MATERIAL: SILICON SEMICONDUCTOR

•

TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

TECHNICAL CHARACTERISTICS

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS AMBIENT AIR DEGC
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC	250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION

SUBSTITUTES & CROSS-REFERENCES 1

EIA5446AReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N4616?

1N4616 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N4616?

There is 1 known substitute for 1N4616: EIA5446A. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N4616?

1N4616 is cataloged in the U.S. Government catalog under NSN 5961-01-019-8769. This indicates validated use in U.S. government and defense supply chains.

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1N4616 — SEMICONDUCTOR DEVICE,DIODE

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