1N4105 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N4105: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES NOMINAL IN, overall_diameter: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-501-1469, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N4105

NSN: 5961-00-501-1469
NIINs: 005011469, 008481901, 010735463
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES NOMINAL IN
overall_diameter	0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
specification/standard_data	81349-MIL-PRF-19500/435 GOVERNMENT SPECIFICATION
voltage_tolerance_in_percent	-5.0 TO 5.0
power_rating_per_characteristic	500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	35.00 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 590.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	11.0 NOMINAL NOMINAL REGULATOR VOLTAGE
NSN	5961-00-501-1469

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.104 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 0.25 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.104 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.300 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	0.25 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
MATERIAL	SILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 1

353-3591-072Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N4105?

1N4105 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N4105?

There is 1 known substitute for 1N4105: 353-3591-072. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N4105?

1N4105 is cataloged in the U.S. Government catalog under NSN 5961-00-501-1469. This indicates validated use in U.S. government and defense supply chains.

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1N4105 — SEMICONDUCTOR DEVICE,DIODE

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